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United States Patent Application: 0040266149 (1484 words) |
 | A method of claim 1, wherein the second well region is formed by implanting arsenic (As) ions having larger mass than phosphorus ions, at a tilt angle of 3.degree. |
 | A method of claim 1, wherein the annealing process is performed using one of an RTP process performed under N.sub.2 or H.sub.2 gas atmosphere at a temperature of 900.degree. |
 | At this time, the ion implantation process for forming the second well region 16 is performed by implanting arsenic (As) ions (size 75) having larger mass than phosphorus ions (size 31), which form the first well region 14, at the tilt angle of 3 to 13.degree. |
| The SUPREM-IV.GS Implant Command (400 words) |
 | This parameter allows the user to specify the angle normal to the substrate that the impurity was implanted at. |
 | This statement specifies that a 100 KeV implant of phosphorus was done with a dose of 1.E14 cm-2. |
 | This statement specifies an implant of phosphorus was done with a dose of 1.E14 cm-2. |