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Encyclopedia > Aluminium gallium arsenide

Aluminium gallium arsenide (also Aluminum gallium arsenide) (AlxGa1-xAs) is a semiconductor with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs.


The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct.


The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.


External link

  • Extensive site on the physical properties of aluminium gallium arsenide (http://www.ioffe.ru/SVA/NSM/Semicond/AlGaAs/index.html)





  Results from FactBites:
 
Gallium arsenide - ArticleWorld (398 words)
Gallium arsenide, with the chemical formula GaAs is a compound formed as a result of a chemical reaction between the elements gallium and arsenic.
Gallium arsenide has a faster switching speed than silicon and was proposed to be used in computing devices.
Gallium arsenide is widely used in the manufacture of equipment used in mobile, radar and satellite communication.
  More results at FactBites »


 

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