Borophosphosilicate glass, commonly known as "BPSG," is a type of silicate glass that includes impurities of both boron and phosphorus. Silicate glasses such as PSG and BPSG are commonly used in semiconductor device fabrication for intermetal layers, i.e., insulating layers deposited between succeedingly higher metal or conducting layers. Silicate glasses have been commonly used in the field of semiconductor device fabrication as an insulator between active layers of the semiconductor device. ... Silicate glasses have been commonly used in the field of semiconductor device fabrication as an insulator between active layers of the semiconductor device. ... Phosphosilicate glass, commonly referred to by the acronym PSG, is a silicate glass commonly used in semiconductor device fabrication for intermetal layers, i. ... Nasas Glenn Research Center clean room. ...
BPSG has been implicated in increasing a device's susceptibility to soft errors - the Boron-10 isotope is good at capturing thermal neutrons from cosmic radiation. It then undergoes fission - producing a gamma ray, an alpha particle, and a lithium ion - these products may then dump charge into nearby structures, causing data loss (bit flipping). In electronics and computing, an error is a signal or datum which is wrong. ... A thermal neutron is a free neutron with a kinetic energy level of ca. ... Cosmic rays can loosely be defined as energetic particles originating outside of the Earth. ... In general fission is a splitting or breaking up into parts. ... This article is about electromagnetic radiation. ... An alpha particle is deflected by a magnetic field Alpha particles or alpha rays are a form of particle radiation which are highly ionizing and have low penetration. ... General Name, Symbol, Number Lithium, Li, 3 Series Alkali metal Group, Period, Block 1(IA), 2, s Density, Hardness 535 kg/m3, 0. ...
In a method for forming a layer of borophosphosilicateglass on a suitable substrate by chemical vapor deposition of a mixture of oxygen and the hydrides of silicon, boron and phosphorus, the improvement wherein the deposition is carried out at a temperature of from about 365.degree.
The use of borophosphosilicateglass as the dielectric material in such a structure is disclosed by Schnable and Kern in copending application Ser.
Borophosphosilicateglass (BPSG) layers and their use in the semiconductor arts are disclosed by Kern in U.S. Pat.
The method of claim 1, wherein said first, second, third, and fourth borophosphosilicateglass are deposited using consecutive low pressure chemical vapor depositions (LPCVD) in a reactor.
The method of claim 1, wherein said third borophosphosilicateglass has a thickness of between about 2000 and 5000 Angstroms.
The method of claim 20, wherein said first, second, third, and fourth borophosphosilicateglass layers are deposited using consecutive low pressure chemical vapor depositions (LPCVD) in a reactor.
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