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Encyclopedia > Chemical mechanical polish

Chemical mechanical polish. Commonly, a semiconductor manufacturing process in which a polishing mixture, commonly a colloidal abrasive, is used in conguntion with a polishing pad to planarize and remove topography from a substrate e.g. a wafer.


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Method of making integrated circuits - Patent 5362669 (1958 words)
Planarization is accomplished by a chemical mechanical polishing process in which coplanar layers of a chemical mechanical polish resistant material are provided in a centre region of wide trenches as well as on the semiconductor substrate surface adjacent the trenches.
The chemical mechanical polish resistant layer in the centre region of a wide trench forms an etch stop to prevent dishing of layers filling the trench during overall wafer planarization by chemical mechanical polishing.
The substrate comprises a surface layer 134 of a chemical mechanical polish resistant layer on the substrate surface 146 and an overlying layer of dielectric 136.
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