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Odor sensing with organic transistors - Patent 6484559 (7950 words) |
 | OFETs have been described in the literature and the teachings of these references as to the manufacture of these transistors and their reported characteristics are incorporated herein by reference. |
| After an OFET is subjected to an odor signal, applying an electrical bias cycle to the gate of an OFET facilitates its recovery to the condition existing prior to the application of the odor. |
| This is in sharp contrast to the response of the discrete OFET shown in FIG. |
| OFET structures with both n- and p-type channels - Patent 7045814 (4770 words) |
| The dual OFET structure of claim 1, wherein one of said source and drain electrodes is a source or drain electrode for a channel in said p-type semiconductor layer and for a channel in said n-type semiconductor layer. |
| The dual OFET structure of claim 1, wherein said one organic semiconductor layers is between said another one of said organic semiconductor layers and said source and drain electrodes. |
| The total resistance of the n-type and p-type OFETs 140, 142 are influenced by the choice of materials used for the n-type and p-type organic semiconductor layers 105, 110, as well as the dimensions of the components of the OFETs 140, 142. |
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