Photoconductivity is an optical and electrical phenomenon in which a material becomes more conductive due to the absorption of electro-magnetic radiation such as visible light, ultraviolet light, or gamma radiation. See photoconductor. An optical phenomenon is any observable event which results from the interaction of light and matter. ... Electrical phenomena are commonplace and unusual events that can be observed which illuminate the principles of the physics of electricity and are explained by them. ... Electrical conductance is an electrical phenomenon where a material contains movable particles with electric charge, which can carry electricity. ... Ultraviolet (UV) radiation is electromagnetic radiation of a wavelength shorter than that of the visible region, but longer than that of soft X-rays. ... This article is about electromagnetic radiation. ... A photoresistor is an electronic component whose resistance decreases with increasing incident light intensity. ...
A photoconductive member according to claim 1, wherein the state of distribution of the atoms (A) is uniform in the direction of the layer thickness.
A photoconductive member according to claim 14, wherein the relation between the layer thickness T.sub.0 of the amorphous layer and the layer thickness t.sub.B of the second layer region is t.sub.B /T.sub.0.ltoreq.0.4.
In the photoconductive member according to the present invention, improvements of higher dark resistance and better adhesion between the amorphous layer and the support on which it is directly provided or between the amorphous layer or other layers are intended preponderantly by incorporation of oxygen atoms in the first layer region (O).
Therefore, when a photoconductive layer is formed of such a material and has so great a film thickness, as that found in a photosensitive member, light having a long wavelength may be absorbed by a portion near the base of the photoconductive layer.
In the second layer (the second blocking layer or the first photoconductive layer) formed on the first layer, at least one of the elements of Group III or V of the Periodic Table is lightly doped, and the second layer is an intrinsic (i-type) semiconductor layer.
A first photoconductive layer 16 is stacked on the layer 14 and has a thickness of 5.mu.m to 60.mu.m, and comprises a-Si:N or a-Si:C containing a Group III element in an amount falling within the range between 1.0.times.10.sup..times.8 atomic % and 1.0.times.10.sup.-4 atomic %.
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