| Reactant gas ejector head and thin-film vapor deposition apparatus - Patent 5728223 (5301 words) |
 | The reactant gases, i.e., the material gas and the oxidizer gas, are introduced from respective sources through the gas supply pipes 24a, 24b and the inlet passages 21a, 21b, and ejected at predetermined rates into the gas mixing chamber 26. |
| The reactant gases ejected from the reactant gas ejector head 5 have already been forcibly mixed with each other in the gas mixing chamber 26, and are flow-rectified by the nozzle 29, and then applied as a uniform downflow to the substrate 11 on the substrate stage 7. |
| In the reactant gas ejector head 5 according to the fourth embodiment, the material and oxidizer gases supplied from the gas supply pipes 24a, 24b are introduced through the distribution passages 38, 39 and the through holes 40, 41 into the gas mixing chambers 35, in which the material and oxidizer gases are mixed together. |
Feeds |
Contact