|
United States Patent: 5,206,526 (4199 words) |
 | The period compositional variation in the superlattice region is such that each period lacks reflection symmetry in any plane parallel to the surface, whereby absorption of photons in the superlattice region can result in the appearance of a voltage across the superlattice region. |
| Among these is ion bombardment of the superlattice region to introduce lattice defects, growth of the material of the superlattice region (e.g., by MBE) at relatively low temperature, or by stimulated recombination in predetermined portions of the superlattice region. |
| Superlattice structures according to the invention can be readily produced by known means, e.g., by MBE growth of Al.sub.1-x Ga.sub.x As on a GaAs substrate, with x varied to result in the desired grading or step-like variation. |
| U.S. Patent: 6005259 - InAs/GaSb superlattice structure infrared detector fabricated by organometallic vapor phase ... (1620 words) |
| An InAs/GaSb superlattice infrared detector prepared on a GaSb or a GaAs substrate by low pressure organometallic chemical vapor deposition, the V to III ratio of the InAs superlattice layer is 28.7 and the V to III ratio of the GaSb layer is 78.5. |
| The V to III ratio of the InAs supperlattice layer is 28.7 and the V to III ratio of the GaSb layer is 78.5. |
| The V to III ratio of the GaSb superlattice structure is 75.5 and 28.7 for the V to III ratio of InAs. |
Feeds |
Contact