Volatile storage is a category of computer storage. Unlike non-volatile storage, it requires power to retain data. Jump to: navigation, search This article needs to be cleaned up to conform to a higher standard of quality. ... Non-volatile storage is a category of computer storage. ...
Storage technologies in this category include delay line memory and most forms of RAM, including DRAM and SRAM. CAM and dual-ported RAM are usually implemented using volatile storage. Delay line memory was a form of computer memory used on some of the earliest digital computers, such as the EDSAC and UNIVAC I. The first such systems consisted of a column of mercury with piezo crystal transducers (a combination of speaker and microphone) at either end. ... Jump to: navigation, search Random access memory (sometimes random-access memory), commonly known by its acronym RAM, is a type of computer storage (in practice only computer chips) whose contents can be accessed in any (i. ... Dram can mean several things: for the imperial unit of volume see dram (volume) for the imperial unit of weight or mass see avoirdupois and apothecaries system of mass for the Armenian monetary unit see dram (currency) DRAM is a type of RAM and unlike dram is spelled in all... Static Random Access Memory (SRAM) is a type of semiconductor memory. ... Jump to: navigation, search Dual-ported RAM (DPRAM) is a type of Random Access Memory that allows multiple reads or writes to occur at the same time, or nearly the same time, unlike single-ported RAM which only allows one access at a time. ...
Changes in the charge storage in each of the elements results in changes in the capacitance of the element; either the capacitance of the element or its charge state is sensed to indicate the state of the element for information storage purposes.
A solid-state camera as claimed in claim 1 wherein a change of state of a storage element form a stable state to a quasi-stable state effects a change in the transconductance of the storage element and in which the means for sensing includes means for sensing any change in the transconductance of individual storage elements.
The storage element 101 is originally at the capacitance value labeled A; a forward bias V.sub.B moves it to point B and, when the bias is removed, it moves to point C. It will then slowly relax from point C to point A (in a time period of 10.sup.5 seconds or more).