The 65 nanometer (65 nm) process is (as of 2007) the most advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e., transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process. See Table 40a in the 2006 industry roadmap [1]. For reference, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of .543 nm, so such transistors are on the order of 100 atoms across. The pitch between two lines drawn at 65 nm may be greater than 130 nm, though. Intel, AMD, IBM, UMC, Chartered and TSMC are currently producing 65 nm chips. Companies planning 65 nm production include Texas Instruments, Cypress Semiconductor and Motorola. Static CMOS Inverter Complementary metal–oxide–semiconductor (CMOS) (see-moss, IPA: ), is a major class of integrated circuits. ... The 10 µm process refers to the level of semiconductor process technology that was reached around 1971-1972 timeframe by the leading semiconductor companies, like Intel. ... The 3 µm process (3 µm or 3000 nm) process refers to the level of semiconductor process technology that was reached around 1975 timeframe by the leading semiconductor companies, like Intel. ... The 1. ... The 1 µm process (1. ... The 800 nanometer (800 nm or 0. ... The 600 nanometer (600 nm or 0. ... The 350 nanometer (350 nm or 0. ... The DEC Alpha 21264A used the 250 nm CMOS process, and was made commercially available in 1999. ... The 180 nanometer (180 nm or 0. ... The 130 nanometer (130 nm or 0. ... The 90 nm node refers to the level of semiconductor process technology that was reached in the 2002-2003 timeframe, by most leading semiconductor companies, like Intel, Texas Instruments, IBM, and TSMC. The origin of the 90 nm value is historical, as it represents a 70% scaling every 2-3... The 45 nanometer (45 nm) process is the next milestone (to be commercially viable in mid 2007 to early 2008) in CMOS fabrication. ... The 32 nanometer (32 nm) process is the next step after the 45 nanometer process in CMOS manufacturing and fabrication. ... The 22 nanometer (22 nm) node is the technology node following 32 nm node. ... The 16 nanometer (16 nm) node is the technology node following 22 nm node. ... This article is about the unit of length. ... 2007 is a common year starting on Monday of the Gregorian calendar. ... Photolithography is a process used in semiconductor device fabrication to transfer a pattern from a photomask (also called reticle) to the surface of a substrate. ... For other uses, see CMOS (disambiguation). ... NASAs Glenn Research Center cleanroom. ... The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by far the most common field-effect transistor in both digital and analog circuits. ... Figure 1: Ribosome structure indicating small subunit (A) and large subunit (B). ... Not to be confused with Silicone. ... Lattice constant, or a, defines the distance between atoms in crystal lattice. ... Properties For other meanings of Atom, see Atom (disambiguation). ... Pitch may refer to: Look up Pitch in Wiktionary, the free dictionary. ... Intel Corporation (NASDAQ: INTC, SEHK: 4335), founded in 1968 as Integrated Electronics Corporation, is an American multinational corporation that is best known for designing and manufacturing microprocessors and specialized integrated circuits. ... Advanced Micro Devices, Inc. ... For other uses, see IBM (disambiguation) and Big Blue. ... UMC (United Microelectronics Corporation) was founded in 1980, as Taiwans first Semiconductor company. ... Chartered Semiconductor Manufacturing SGX: C27 NASDAQ: CHRT (abbreviated CSM) is the worlds fourth largest dedicated independent semiconductor foundry, with its headquarters and main operations located in the Woodlands Industrial Park, Kranji Singapore. ... Taiwan Semiconductor Manufacturing Company, Limited (Traditional Chinese: 台灣積體電路製造股份有限公司, abbrev. ... Texas Instruments (NYSE: TXN), better known in the electronics industry (and popularly) as TI, is an American company based in Dallas, Texas, USA, renowned for developing and commercializing semiconductor and computer technology. ... Cypress Semiconductor began operations in 1982 and listed publicly in 1986. ... Motorola Inc. ...

While feature sizes may be drawn as 65 nm or less, the wavelengths of light used for lithography are 193 nm and 248 nm. Fabrication of sub-wavelength features requires special imaging technologies, such as optical proximity correction and phase-shifting masks. Many of these techniques incur marginal costs in addition to those associated with upgrading equipment such as steppers and supplies such as photoresist. Furthermore, these costs are multiplied by an increasing number of mask layers that must be printed at the minimum pitch, and the reduction in yield from printing so many layers at the cutting edge of the technology. For new integrated circuit designs, this factors into the costs of prototyping and production. Upgraded 90-nanometer processes now compete with the 65 nm node from the same vendor, blurring the line between old and new technology. Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. ... A schematic illustration of various types of masks: (a) a conventional (binary) mask; (b) an alternating phase-shift mask; (c) an attenuated phase-shift mask. ... In economics and finance, marginal cost is the change in total cost that arises when the quantity produced changes by one unit. ... A stepper is a device used in the manufacture of integrated circuits (ICs) that is similar in operation to a slide projector or a photographic enlarger. ... It has been suggested that this article or section be merged with resist. ... The 90 nm node refers to the level of semiconductor process technology that was reached in the 2002-2003 timeframe, by most leading semiconductor companies, like Intel, Texas Instruments, IBM, and TSMC. The origin of the 90 nm value is historical, as it represents a 70% scaling every 2-3...

Gate thickness, another important dimension, is reduced to as little as 1.2 nm (Intel). Only a few atoms insulate the "switch" part of the transistor, causing charge to flow through it. This undesired effect, leakage, is caused by quantum tunneling. The new chemistry of high-k gate dielectrics must be combined with existing techniques including substrate bias and multiple threshold voltages to prevent leakage from prohibitively consuming power. Leakage describes an unwanted loss, or leak, of something which escapes from its proper location. ... Quantum tunneling is the quantum-mechanical effect of transitioning through a classically-forbidden energy state. ... High K dielectric may be used in next generation electronic component to replace SiO2 Gate dielectric. ... The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by far the most common field-effect transistor in both digital and analog circuits. ...

IEDM papers from Intel in 2002, 2004 and 2005 indicate that the minimum feature pitch did not change much (220 nm to 210 nm) going from 90 nm to 65 nm node, even for the low power process. This suggests that scaling down the distance between microprocessor transistors is slowing down dramatically, but chip size can be made smaller by crowding a larger fraction of transistors at the minimum distance. The International Electron Devices Meeting is an annual conference held alternatively in San Francisco, California and Washington D.C. Established in 1954, IEDM is the worlds main forum on advancement in semiconductor and electronic devices. ... Pitch may refer to: Look up Pitch in Wiktionary, the free dictionary. ...

Processors using 65 nm manufacturing technology

• Intel Pentium 4 (Cedar Mill) – 2006-01-16
• Intel Pentium D 900-series – 2006-01-16
• Intel Celeron D (Cedar Mill cores) – 2006-05-28
• Intel Core – 2006-01-05
• Intel Core 2 – 2006-07-27
• Intel Xeon (Sossaman) – 2006-03-14
• AMD Athlon 64 series (starting from Lima) – 2007-02-20
• Microsoft Xbox 360 "Falcon" CPU - 2007-09

The Pentium 4[1] brand refers to Intels mainstream desktop and mobile single-core CPUs (introduced on November 20, 2000[2]) with the seventh-generation NetBurst architecture, which was the companys first all-new design since the Intel P6 of the Pentium Pro branded CPUs of 1995. ... Pentium D logo as of 2006. ... 633MHz Celeron A Celeron is any of a large number of different budget x86 microprocessors produced by Intel and marketed as a second line to complement their more expensive but higher-performance Pentium CPUs. ... This article is about the Intel mobile processor family. ... The Core 2 brand refers to a range of Intels consumer 64-bit dual-core and MCM quad-core CPUs with the x86-64 instruction set, and based on the Intel Core microarchitecture, which derived from the 32-bit dual-core Yonah laptop processor. ... The Xeon is Intels current generation of server-class microprocessors for PCs. ... The Athlon 64 is an eighth-generation, AMD64 architecture microprocessor produced by AMD, released on September 23, 2003. ...

Processors projected to use 65 nm manufacturing technology

• Sun UltraSPARC T2 – 2007-H2
• Chartered Xenon – 2007
• Intel Itanium 2 (Tukwila) – 2008-12
• Microsoft Xbox 360 "Jasper" CPU - 2008

Sun Microsystems UltraSPARC T2 microprocessor, is a multithreading, multicore CPU. The UltraSPARC T2s predecessor was the UltraSPARC T1. ... Chartered Semiconductor Manufacturing SGX: C27 NASDAQ: CHRT (abbreviated CSM) is the worlds fourth largest dedicated independent semiconductor foundry, with its headquarters and main operations located in the Woodlands Industrial Park, Kranji Singapore. ... Not to be confused with the Intel Xeon. ... Itanium 2 logo The Itanium 2 is an IA-64 64-bit microprocessor developed jointly by Hewlett-Packard (HP) and Intel, and introduced on July 8, 2002. ...

References

• "Intel to cut Prescott leakage by 75% at 65nm", The Register, August 31, 2004. Retrieved on 2007-08-25. 
• Engineering Sample of the "Yonah" core Pentium M, IDF Spring 2005, ExtremeTech
• "AMD's 65 nano silicon ready to roll", The Inquirer, September 2, 2005. Retrieved on 2007-08-25.